Based on 182mm wafer, N-type HJT half-cut cells

Module power up to 445W； module efficiency up to 22.70%

Use super MBB half-cut cell technology to minimize micro-crack impacts, so no cutting loss on modules

Power output from the front is 4.1% more than that of TOPCon module, and power output from the back is 14.76% more than that of TOPCon module

No Boron-Oxygen-Induced Degradation (BO-LID), excellent anti-LeTID & anti-PID performance. Low power degradation, and high energy yield

With the temperature coefficient -0.243%/℃